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TSM 160 P 02 CS
Taiwan Semiconductor SMD MOSFETs der Serie TSM
- SMD-Leistungs-MOSFETs
- im SO8-Gehäuse
- TSC
TSM 160 P 02 CS
Technische Daten
| Hersteller | Taiwan Semiconductor |
| Herstellerbezeichnung | TSM160P02CS RLG |
| Gehäuse | SO8 |
| Ausführung | gegurtet |
| Max. Drain-Source-Spannung [V] | 20 |
| Max. Drain-Source-Durchlasswiderstand [Ω] | 0,016 |
| Einschaltverzögerungszeit [ns] | 16,2 |
| Max. Dauer-Drainstrom bei TC = 25°C [A] | 1,1 |
| Gate-Schwellenspannung, min. [V] | 0,3 |
| Ausschaltverzögerungszeit [ns] | 114 |