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TSM 180 P 03 CS
Taiwan Semiconductor SMD MOSFETs der Serie TSM
- SMD-Leistungs-MOSFETs
- im SO8-Gehäuse
- TSC
TSM 180 P 03 CS
Technische Daten
| Hersteller | Taiwan Semiconductor |
| Herstellerbezeichnung | TSM180P03CS RLG |
| Gehäuse | SO8 |
| Ausführung | gegurtet |
| Max. Drain-Source-Spannung [V] | 30 |
| Max. Drain-Source-Durchlasswiderstand [Ω] | 0,018 |
| Einschaltverzögerungszeit [ns] | 9 |
| Max. Dauer-Drainstrom bei TC = 25°C [A] | 10 |
| Gate-Schwellenspannung, min. [V] | 1,2 |
| Ausschaltverzögerungszeit [ns] | 59,8 |