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IRFP 350
Vishay MOSFETs der Serie IRFP
- Leistungs-MOSFETs
- im TO247AC-Gehäuse
- Vishay Siliconix®
IRFP 350
Technische Daten
| Hersteller | Vishay |
| Herstellerbezeichnung | IRFP350PBF |
| Gehäuse | TO247AC |
| Max. Drain-Source-Spannung [V] | 400 |
| Max. Drain-Source-Durchlasswiderstand [Ω] | 0,3 |
| Einschaltverzögerungszeit [ns] | 16 |
| Max. Dauer-Drainstrom bei TC = 25°C [A] | 16 |
| Gate-Schwellenspannung, min. [V] | 2 |
| Ausschaltverzögerungszeit [ns] | 87 |