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SIR 426 DP
Vishay SMD MOSFETs der Serie Si
- SMD-Leistungs-MOSFETs
- im PowerPak SO8-Gehäuse
- Vishay TrenchFET™
- gegurtet
SIR 426 DP
Technische Daten
| Hersteller | Vishay |
| Herstellerbezeichnung | SIR426DP-T1-GE3 |
| Gehäuse | PowerPak SO8 |
| Ausführung | gegurtet |
| Max. Drain-Source-Spannung [V] | 30 |
| Max. Drain-Source-Durchlasswiderstand [Ω] | 0,0028 |
| Einschaltverzögerungszeit [ns] | 14 |
| Max. Dauer-Drainstrom bei TC = 25°C [A] | 50 |
| Gate-Schwellenspannung, min. [V] | 1,2 |
| Ausschaltverzögerungszeit [ns] | 36 |