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Rohm SiC-Leistungs-MOSFETs der Serie SCH und SCT
- TO-247 Gehäuse
- n-Kanal Typ
- Siliziumcarbid (SiC) als Halbleitermaterial
- niedriger Einschaltwiderstand
- schnelle Schaltgeschwindigkeit
- RoHS konform
- einfach parallel zu schalten
- geringe Rückwärtserholzeit
Rohm SiC-Leistungs-MOSFETs der Serie SCH und SCT
- TO-247 Gehäuse
- n-Kanal Typ
- Siliziumcarbid (SiC) als Halbleitermaterial
- niedriger Einschaltwiderstand
- schnelle Schaltgeschwindigkeit
- RoHS konform
- einfach parallel zu schalten
- geringe Rückwärtserholzeit
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