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IKD10N60RC2ATMA1
Infineon IGBT series IGD and IKD
- low-loss IGBTs
- in a TO252 housing
- TRENCHSTOP™ and Fieldstop technology
- taped
IKD10N60RC2ATMA1
Specifications
| manufacturer | Infineon Technologies |
| Manufacturer's name | IKD10N60RC2ATMA1 |
| Case | TO252 |
| Design | taped |
| Power dissipation [W] | 79 |
| Turn-on delay time [ns] | 14 |
| Max. collector-emitter breakdown voltage [V] | 600 |
| Min. gate threshold voltage [V] | 4,3 |
| Max. collector current, pulsed [A] | 30 |
| Turn-off delay time [ns] | 250 |
| Max. continuous collector current at TC = 25°C | 18,8 |