> Semiconductors>Transistors>IGBTs>Infineon SMD IGBTs, TO252 housing, IGD and IKD series>IKD10N60RC2ATMA1

Manufacturers

IKD10N60RC2ATMA1

Infineon IGBT series IGD and IKD

  • low-loss IGBTs
  • in a TO252 housing
  • TRENCHSTOP™ and Fieldstop technology
  • taped
IKD10N60RC2ATMA1, Infineon SMD IGBTs, TO252 housing, IGD and IKD series

IKD10N60RC2ATMA1

242019 IKD10N60RC2ATMA1 IKD10N60RC2ATMA1 Infineon IGBT series IGD and IKD. low-loss IGBTs in a TO252 housing TRENCHSTOP™ and Fieldstop technology taped

Specifications

manufacturer
Manufacturer's name IKD10N60RC2ATMA1
Case TO252
Design taped
Power dissipation [W] 79
Turn-on delay time [ns] 14
Max. collector-emitter breakdown voltage [V] 600
Min. gate threshold voltage [V] 4,3
Max. collector current, pulsed [A] 30
Turn-off delay time [ns] 250
Max. continuous collector current at TC = 25°C 18,8
Data Sheet

Unit price

0,574 €

Stock: 2485
Further delivery:
CW 17/2026

Minimum order quantity 5 units or
multiples of 5.