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Insulated-gate bipolar transistors (IGBTs) in a TO220 housing and with PowerMESH™. We offer various types of this STMicroelectronics series.
| manufacturer | STMicroelectronics |
| Manufacturer's name | STGP19NC60HD |
| Case | TO220 |
| Power dissipation [W] | 130 |
| Turn-on delay time [ns] | 25 |
| Max. collector-emitter breakdown voltage [V] | 600 |
| Min. gate threshold voltage [V] | 3,75 |
| Max. collector current, pulsed [A] | 60 |
| Turn-off delay time [ns] | 97 |
| Max. continuous collector current at TC = 25°C | 40 |