Manufacturers

TSG 25 N 120 CN

Taiwan Semiconductor IGBT series TSG

  • insulated-gate bipolar transistors (IGBTs)
  • with fast-recovery epitaxial diodes (FREDs)
  • in a TOP3 resp. TO264 housing

TSG 25 N 120 CN

38384 TSG 25 N 120 CN TSG25N120CN C0 TSG25N120CN C0 Taiwan Semiconductor IGBT series TSG. insulated-gate bipolar transistors (IGBTs) with fast-recovery epitaxial diodes (FREDs) in a TOP3 resp. TO264 housing

Discontinued items. Only remainder of stock available.

Specifications

manufacturer
Manufacturer's name TSG25N120CN C0
Case TOP3
Power dissipation [W] 312
Turn-on delay time [ns] 57
Max. collector-emitter breakdown voltage [V] 1200
Min. gate threshold voltage [V] 3
Max. collector current, pulsed [A] 75
Turn-off delay time [ns] 240
Max. continuous collector current at TC = 25°C 50
Data Sheet

Unit price

3,59 €

Stock: 24