Manufacturers

FS 35 R 12 W1T4

Infineon IGBT module series BSM/FF/FS

  • IGBT diode modules
  • in a 34MM-1 / 62MM-1 / EASY2-1 / EASY1B-1 housing
  • insulated-gate bipolar transistors

FS 35 R 12 W1T4 FS35R12W1T4BOMA1

FS 35 R 12 W1T4

44864 FS 35 R 12 W1T4 FS35R12W1T4BOMA1 FS35R12W1T4BOMA1 Infineon IGBT module series BSM/FF/FS. IGBT diode modules in a 34MM-1 / 62MM-1 / EASY2-1 / EASY1B-1 housing insulated-gate bipolar transistors

Specifications

manufacturer
Manufacturer's name FS35R12W1T4BOMA1
Case EASY1B-1
Peak forward surge current [A] -
(Max.) peak recurrent reverse voltage [V] -
(Max.) average forward (rectified) current [A] -
Power dissipation [mW] 225
Turn-on delay time [ns] 25
Max. collector-emitter breakdown voltage [V] 1200
Min. gate threshold voltage [V] 5
Max. collector current, pulsed [A] 70
Turn-off delay time [ns] 300
Max. continuous collector current at TC = 25°C 65
Data Sheet

Unit price

40,29 €

Stock: 6