> Semiconductors>Transistors>IGBTs>Taiwan Semiconductor IGBTs, with FRED, TOP3/TO264 housing, TSG series>TSG 10 N 120 CN

Manufacturers

TSG 10 N 120 CN

Taiwan Semiconductor IGBT series TSG

  • insulated-gate bipolar transistors (IGBTs)
  • with fast-recovery epitaxial diodes (FREDs)
  • in a TOP3 resp. TO264 housing
TOP3

TSG 10 N 120 CN

38383 TSG 10 N 120 CN TSG10N120CN C0 TSG10N120CN C0 Taiwan Semiconductor IGBT series TSG. insulated-gate bipolar transistors (IGBTs) with fast-recovery epitaxial diodes (FREDs) in a TOP3 resp. TO264 housing

Discontinued items. Only remainder of stock available.

Specifications

manufacturer
Manufacturer's name TSG10N120CN C0
Case TOP3
Power dissipation [W] 125
Turn-on delay time [ns] 30
Max. collector-emitter breakdown voltage [V] 1200
Min. gate threshold voltage [V] 3
Max. collector current, pulsed [A] 42
Turn-off delay time [ns] 130
Max. continuous collector current at TC = 25°C 21
Data Sheet

Unit price

2,69 €

Stock: 24