Manufacturers

TSG 40 N 120 CE

Taiwan Semiconductor IGBT series TSG

  • insulated-gate bipolar transistors (IGBTs)
  • with fast-recovery epitaxial diodes (FREDs)
  • in a TOP3 resp. TO264 housing

TSG 40 N 120 CE

38385 TSG 40 N 120 CE TSG40N120CE C0 TSG40N120CE C0 Taiwan Semiconductor IGBT series TSG. insulated-gate bipolar transistors (IGBTs) with fast-recovery epitaxial diodes (FREDs) in a TOP3 resp. TO264 housing

Discontinued items. Only remainder of stock available.

Specifications

manufacturer
Manufacturer's name TSG40N120CE C0
Case TO264
Power dissipation [W] 208
Turn-on delay time [ns] 41
Max. collector-emitter breakdown voltage [V] 1200
Min. gate threshold voltage [V] 4
Max. collector current, pulsed [A] 120
Turn-off delay time [ns] 200
Max. continuous collector current at TC = 25°C 64
Data Sheet

Unit price

4,99 €

Stock: 24